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418 |
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ชื่อเรื่อง |
ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENTVOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES
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ผู้สร้างผลงาน |
MEGHERBI, M.L.
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ผู้สร้างผลงาน |
DEHIMI, L.
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ผู้สร้างผลงาน |
TERGHINI, W.
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ผู้สร้างผลงาน |
PEZZIMENTI, F.
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ผู้สร้างผลงาน |
DELLA CORTE, F.G.
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Description |
ABSTRACTIn this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigatedexperimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performedusing proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and holeminority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved andwell behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrierlifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. Weachieved a good agreement between simulations and measured data. The measured and the simulated forward characteristicsindicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies ofabout 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.KEYWORDS: p-i-n diode, silicon carbide, silvaco, device simulation, lifetimes.
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Publisher |
Université de Biskra
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Contributor |
Mohamed Khider university
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Contributor |
Biskra
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วันที่ |
2015-03-17
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ประเภท |
info:eu-repo/semantics/article
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ประเภท |
info:eu-repo/semantics/publishedVersion
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ประเภท |
Article évalué par les pairs
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รูปแบบ |
application/pdf
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Identifier |
http://revues.univ-biskra.dz/index.php/cds/article/view/1207
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แหล่งข้อมูล |
Courrier du Savoir; Vol. 19 (2015): COURRIER DU SAVOIR(Mars)
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แหล่งข้อมูล |
Courrier du Savoir; Vol. 19 (2015): COURRIER DU SAVOIR(Mars)
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แหล่งข้อมูล |
1112-3338
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แหล่งข้อมูล |
1112-3338
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ภาษา |
fra
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Relation |
http://revues.univ-biskra.dz/index.php/cds/article/view/1207/1150
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