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661 |
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ชื่อเรื่อง |
MEASUREMENT AND ANALYSIS OF I-V-T CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODE
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ผู้สร้างผลงาน |
TERGHINI, W.
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ผู้สร้างผลงาน |
SAADOUNE, A.
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ผู้สร้างผลงาน |
DEHIMI, L.
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ผู้สร้างผลงาน |
MEGHERBI, M.L.
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ผู้สร้างผลงาน |
ÖZÇELIKC, S.
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Description |
ABSTRACTIn this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in thetemperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on theanalysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( )on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases,ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very lowcompared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant(A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-SiSchottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussiandistribution of the Schottky barrier heights (SBHs).KEYWORDS: Schottky contacts, current-voltage-temperature characteristics, Gaussian distribution, Barrier inhomogeneity.
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Publisher |
Université de Biskra
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Contributor |
Mohamed Khider university
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Contributor |
Biskra
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วันที่ |
2015-03-17
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ประเภท |
info:eu-repo/semantics/article
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ประเภท |
info:eu-repo/semantics/publishedVersion
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ประเภท |
Article évalué par les pairs
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รูปแบบ |
application/pdf
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Identifier |
http://revues.univ-biskra.dz/index.php/cds/article/view/1204
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แหล่งข้อมูล |
Courrier du Savoir; Vol. 19 (2015): COURRIER DU SAVOIR(Mars)
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แหล่งข้อมูล |
Courrier du Savoir; Vol. 19 (2015): COURRIER DU SAVOIR(Mars)
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แหล่งข้อมูล |
1112-3338
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แหล่งข้อมูล |
1112-3338
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ภาษา |
fra
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Relation |
http://revues.univ-biskra.dz/index.php/cds/article/view/1204/1148
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